坩堝下降設備
所屬分類：
第二代半導體工藝設備
概要：
◆ 主要用于4-8英寸砷化鎵、磷化銦等化合物單晶生長 ◆ 設備由機架、安部支撐機構、加熱器和控制系統組成 ◆ 能夠實現安移動和轉動的精確控制
關鍵詞：
坩堝下降爐
坩堝下降設備
產品概述/Product Introduction：
♦ 主要用于4-8英寸砷化鎵、磷化銦等化合物單晶生長
Mainly used for single crystal growth of 4-8 inches of gallium arsenide, indium phosphide and other compounds
♦ 設備由機架、安瓿支撐機構、加熱器和控制系統組成
The equipment consists of a rack, ampoule support mechanism, heater and control system
♦ 能夠實現安瓿移動和轉動的精確控制
Accurate control of ampoule movement and rotation can be realized
產品特點/Product Characteristics：
♦ 工業計算機控制系統(WINDOWS系統界面，操作方便簡潔)
Industrial computer control system (WINDOWS system interface, easy and concise operation)
♦ 關鍵部件均采用進口,確保設備的高可靠性
The key parts are imported to ensure the high reliability of the equipment
♦ 控溫精度高,溫區控溫穩定性好
High temperature control precision and good temperature control stability in temperature zone
♦ 具有斷電報警、超溫、欠溫報警、極限超溫報警等多種安全保護功能
lt has various safety protection functions such as power failure alarm, over-temperature alarm, under-tempera-ture alarm and extreme over-temperature alarm
♦ 速度可調的梯形波、三角波及正弦波等旋轉功能
Rotation functions such as trapezoidal wave, triangular wave and sine wave with adjustable speed
♦ 單晶質量高
High quality single crystal
技術指標/Technical Indicators：
|
晶片類型:4/6英寸 Wafer type: 4/6 inches |
工作溫度范圍:1100℃ Operating temperature range: 1100℃ |
|
加熱器最高溫度:1250°C Maximum heater temperature: 1250℃ |
控溫精度:土0.5℃ Temperature control accuracy: 土0.5℃ |
|
控溫段數:4段 Number of temperature control sections: 4 sections |
爐腔壓力:4MPa Furnace chamber pressure: 4MPa |
應用范圍/Scope：
♦ 廣泛用于材料的紺蝸下降的單晶生長
Bridgman-descending single crystal growth widely used in materials
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