氮化鎵(GaN)HVPE單晶生長設備 立式
所屬分類:
第三代半導體工藝設備
概要:
? 用于氮化鎵(GaN)單晶生長 ? 用于氧化鎵(Ga?O?)、氮化鋁(AIN)、磷化銦(InP)、砷化鎵(GaAs)外延生長
關鍵詞:
HVPE單晶生長設備 立式
氮化鎵(GaN)HVPE單晶生長設備 立式
產品概述/Product Introduction:
♦ 用于氮化鎵(GaN)單晶生長
Used for the growth of gllium nitride (GaN) single crystal
♦ 用于氧化鎵(Ga?O?)、氮化鋁(AIN)、磷化銦(InP)、砷化鎵(GaAs)外延生長
Used for the epitaxial growth of gallium oxide (Ga?O?), aluminum nitride (AIN), indium. phosphide (InP) and gallium arsenide (GaAs)
產品特點/Product Characteristics:
♦ 基礎工藝包
Basic process package
1.氮化鎵(GaN)單晶生長尺寸: 2英寸
Gallium nitride (GaN) single crystal growth size: 2 inches
2.單晶生長速率:≥50微米/小時
Single crystal growth rate:≥50 microns/hour
3.藍寶石襯底外延生長氮化鎵(GaN)單晶層厚度: < 200微米
Thickness of gallium nitride (GaN) single crystal layer grown by epitaxial growth at the bottom of sapphire village: < 200 microns
♦ 襯底: 2/4/6英寸
Substrate size: 2/4/6 inches
♦ 數量: 1片/多片
Quantity: 1 tablet/multiple tablets
♦ 立式/臥式結構合理可靠,滿足客戶多種尺寸襯底,多種操作方式需要
Vertical/horizontal structure is reasonable and reliable, which can meet the needs of customers with various sizes of substrates and various operation modes
♦ 控溫精度高,溫區穩定性好
High temperature control precision and good stability in temperature zone
♦ 完美可靠的安全保護功能:硬件保護+軟件互鎖
Perfect and reliable security protection function: Hardware protection + software interlock.
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